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PD - 91781B
IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28)
TM (R)
Product Summary
Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6 IRHQ63110 300K Rads (Si) 0.6 IRHQ6110 100K Rads (Si) 1.1 IRHQ63110 300K Rads (Si) 1.1 ID 3.0A 3.0A -2.3A -2.3A CHANNEL N N P P
LCC-28
International Rectifier's RAD-HardTM HEXFET(R) MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes, refer to the last page
Pre-Irradiation
N-Channel
3.0 1.9 12 12 0.1 20 85 3.0 1.2 3.0 -55 to 150
o
P-Channel
-2.3 -1.5 -9.2 12
0.1
Units A
W
W/C
20 75 -2.3 1.2 9.0
V mJ A mJ V/ns
C
g
300 (for 5s) 0.89 (Typical)
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1
03/24/04
IRHQ6110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- -- 2.0 1.4 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 0.62 0.60 4.0 -- 25 250 100 -100 17 4.0 5.5 13 16 23 15 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 3.0A VGS = 12V, ID = 1.9A VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 1.9A VDS= 80V, VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 3.0A VDS = 50V VDD = 50V, ID = 3.0A, VGS = 12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
270 110 23
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 3.0 12 1.2 173 863
Test Conditions
A
V nS nC Tj = 25C, IS = 3.0A, VGS = 0V Tj = 25C, IF = 3.0A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC Junction-to-Case
Min Typ Max Units
-- -- 10.4
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes, refer to the last page
2
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Pre-Irradiation
IRHQ6110
Electrical Characteristics For Each P-Channel Device @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-100 -- -- -2.0 1.1 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 1.1 -4.0 -- -25 -250 -100 100 16 4.3 3.3 21 17 32 32 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -1.5A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -1.5A VDS= -80V, VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -2.3A VDS = -50V VDD = -50V, ID = -2.3A, VGS = -12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
285 90 13
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -2.3 -9.2 -3.0 138 555
Test Conditions
A
V nS nC Tj = 25C, IS = -2.3A, VGS = 0V Tj = 25C, IF = -2.3A, di/dt 100A/s VDD -25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max
-- -- 10.4
Units
C/W
Test Conditions
For footnotes, refer to the last page
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IRHQ6110
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (LCC-28) Diode Forward Voltage
100K Rads(Si)1
300K to 1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS = 80V, VGS =0V VGS = 12V, ID = 1.9A VGS = 12V, ID = 1.9A VGS = 0V, I S = 3.0A
Min 100 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.556 0.60 1.2
Min 100 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 25 0.706 0.75 1.2
1. Part number IRHQ6110 2. Part number IRHQ63110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br I LET MeV/(mg/cm2)) 28.0 36.8 59.8 Energy (MeV) 285 305 343 VDS (V) Range (m) @V GS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43.0 100 100 100 100 70 39.0 100 80 70 50 -- 32.6 50 40 35 -- --
120 100 80 VDS 60 40 20 0 0 -5 -10 VGS -15 -20 -25
Cu Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
4
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Pre-Irradiation
IRHQ6110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25C, Post Total Dose Irradiation Parameter 100K Rads(Si)1 300K to 1000K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (LCC-28) Diode Forward Voltage -100 - 2.0 -- -- -- -- -- -- -- -4.0 -100 100 -25 1.056 1.1 -3.0 -100 - 2.0 -- -- -- -- -- -- -- -5.0 -100 100 - 25 1.056 1.1 -3.0 V nA A V VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS =0V VGS = -12V, ID = -1.5A VGS = -12V, ID = -1.5A VGS = 0V, IS = -2.3A
1. Part numbers IRHQ6110 2. Part number IRHQ63110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br I LET MeV/(mg/cm2)) 28.0 36.8 59.8 Energy (MeV) 285 305 343 Range (m) @VGS=0V @VGS=5V 43.0 -100 -100 39.0 -100 -100 32.6 -60 -- VDS (V) @VGS=10V -100 -70 -- @VGS=15V -70 - 50 -- @V GS=20V -60 -40 --
-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
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5
IRHQ6110 N-Channel Q1,Q4
100
Pre-Irradiation
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1
1
5.0V
20s PULSE WIDTH T = 150 C
J 1 10 100
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 3.0A
I D , Drain-to-Source Current (A)
2.5
10
TJ = 25 C
2.0
1.5
1
TJ = 150 C
1.0
0.5
0.1 5 7 9
V DS = 50V 20s PULSE WIDTH 11 13 15
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
6
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Pre-Irradiation N-Channel Q1,Q4
500
IRHQ6110
400
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 3.0A 3.7A
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
300
Ciss
12
200
C oss
8
100
4
C rss
0 1 10 100
0 0 2 4 6
FOR TEST CIRCUIT SEE FIGURE 13
10 12 8 14
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
I D , Drain Current (A)
10
TJ = 150 C
100us 1ms
1
1
TJ = 25 C V GS = 0 V
0.6 0.8 1.0 1.2 1.4 0.1
0.1 0.4
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
VSD ,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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7
IRHQ6110 N-Channel Q1,Q4
3.0
Pre-Irradiation
VDS VGS
RD
2.5
D.U.T.
+
RG
I D , Drain Current (A)
-V DD
2.0
VGS
1.5
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.5
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC )
10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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Pre-Irradiation N-Channel Q1,Q4
200
IRHQ6110
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
150
TOP BOTTOM ID 1.3A 1.9A 3.0A
VDS
L
D R IV E R
RG
2VGS 0V tp
D .U .T.
IA S
+ V - DD
100
A
0 .0 1
50
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHQ6110 P-Channel Q2,Q3
100
Pre-Irradiation
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
10
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
1
-5.0V
1
-5.0V
0.1
0.1
0.01 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.01 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 14. Typical Output Characteristics
Fig 15. Typical Output Characteristics
100
2.5
TJ = 25 C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -2.3A
-I D , Drain-to-Source Current (A)
2.0
TJ = 150 C
1.5
1.0
1
0.5
0.1 5 7 9
V DS = -50V 20s PULSE WIDTH 11 13 15
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 16. Typical Transfer Characteristics
Fig 17. Normalized On-Resistance Vs. Temperature
10
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Pre-Irradiation P-Channel Q2,Q3
500
IRHQ6110
400
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -2.3A
16
V DS = 80V V DS = 50V V DS = 20V
C, Capacitance (pF)
300
Ciss
12
200
8
C oss
100
4
C rss
0 1 10 100 0 0 4
26
FOR TEST CIRCUIT SEE FIGURE 13
12 8 16
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
TJ = 150 C
-ID , Drain Current (A) I
10
100us 1ms 10ms
1
TJ = 25 C
1
0.1 0.5
V GS = 0 V
1.0 1.5 2.0 2.5 3.0 3.5
0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
100
1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 20. Typical Source-Drain Diode Forward Voltage
Fig 21. Maximum Safe Operating Area
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11
IRHQ6110 P-Channel Q2,Q3
2.5
Pre-Irradiation
V DS VGS
RD
2.0
D.U.T.
+
-ID , Drain Current (A)
1.5
VGS
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 23a. Switching Time Test Circuit
0.5
td(on) tr t d(off) tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 22. Maximum Drain Current Vs. Case Temperature
VDS
Fig 23b. Switching Time Waveforms
100
Thermal Response (Z thJC )
10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
12
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-
RG
V DD
Pre-Irradiation P-Channel Q2,Q3
VDS L
IRHQ6110
200
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T. IA S tp
0 .0 1
VD D A D R IV E R
VGS -2 0 V
150
ID -1A -1.5A BOTTOM -2.3A TOP
100
15V
50
Fig 25a. Unclamped Inductive Test Circuit
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 25c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 25b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 26a. Basic Gate Charge Waveform
Fig 26b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
13
IRHQ6110
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 18.7mH, Peak IL = 3.0A, VGS = 12V I SD 3.0A, di/dt 165A/s, VDD 100V, TJ 150C Pulse width 300 s; Duty Cycle 2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A VDD = - 25V, starting TJ = 25C, L= 28.4mH, Peak I L = - 2.3A, VGS = -12V ISD - 2.3A, di/dt - 244A/s, VDD -100V, TJ 150C
Case Outline and Dimensions -- LCC-28
Q2
Q1 Q3 Q4
Q3
Q4 Q2 Q1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2004
14
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